rf-Signal-induced heating effects in single-electron pumps composed of gate-tunable quantum dots

From both a fundamental viewpoint and the perspective of wave-function engineering an electron pumped by single-electron sources, it is important to understand how gains energy while propagating along time-dependent region in quantum Hall channel. In our previous work, we experimentally observed that, when travels through before entering pump, pump current becomes substantially larger than quantized value. We here present results theoretical experimental investigation mechanism underlying heating electrons traveling potential induced rf signal. Using Floquet scattering theory, describe distribution heated electrons, whose effective temperature can be cryostat temperature. The behavior measured currents barrier height radio-frequency power are varied good qualitative agreement with predictions.